基質摻雜離子對（Y,Rn）2O2S∶Sm3+,Ti4+,Mg2+（Rn=La,Gd,Lu,Ga,Al）紅色長余輝材料余輝性能的影響

基質摻雜離子對（Y,Rn）₂O₂S∶Sm³⁺,Ti⁴⁺,Mg²⁺（Rn=La,Gd,Lu,Ga,Al）紅色長余輝材料余輝性能的影響

摘要: 采用高溫固相法制備了基質摻雜的（Y，Rn）₂O₂S：Sm³⁺，Ti⁴⁺，Mg²⁺（Rn=La，Gd，Lu，Ga，Al）紅色長余輝材料，主峰均為⁴G_5/2→6H_7/2躍遷的紅橙色光發射，不受基質摻雜的影響．余輝性能測試表明摻雜離子半徑對余輝性能具有重要的影響：單摻時，與Y³⁺半徑相近并略小時樣品的余輝時間有正增長；雙離子共摻時均為小半徑的摻雜對余輝性能有顯著的提高，其中之一半徑較大時即具有負效應．并對可能存在的機理進行了初步探討．

Abstract: Host doped (Y,Rn)₂O₂S:Sm³⁺,Ti⁴⁺,Mg²⁺ (Rn=La, Gd, Lu, Ga, Al) red phosphors were prepared by solid state method. Their chief emission peaks are in the red-orange range coming from the energy transition of ⁴G_5/2→⁶H_7/2 and host-doping has little effluence on the emitting spectra. Afterglow results show that the semi diameter of doped ions has some effect on the longlasting property. When the doped ion is a little smaller than Y³⁺, the afterglow time will increase. When two ions are doped, two smaller ions doping will promote the long-lasting property; if one ion is larger than Y³⁺, it will shorten the long-lasting time. The presumable mechanism was also discussed.