氮化燒成后硅在剛玉氮化硅材料中的賦存形態

Morphology of silicon in corundum silicon-nitride composites after nitridation

摘要: 研究了不同溫度氮化燒成后,硅在剛玉氮化硅材料中的賦存形態.結果表明:1300℃氮化后,硅的外層包裹著絮狀的0'-Sialon;1400℃時,硅顆粒破裂且內部有氮化硅生成; 1500℃時,已沒有殘留硅保留下來,硅氮化生成了0'-Sialon和氮化硅;1600℃時,硅氮化完全,其中的雜質相CaO,Fe₂O₃等富集在一起.

Abstract: The morphology of silicon was studied in corundum silicon-nitride composites after nitridation at different temperatures. The results showed that silicon was wrapped by flocculant O'-Sialon at 1300℃. Silicon grains were broken and silicon nitride formed inside the grains at 1400℃. All silicon was nitrided into O'-Sialon or silicon nitride without any silicon left at 1500℃. Impurities from silicon such as CaO, Fe₂O₃ were aggregated at 1600℃.