SiO2/Ta界面反應及其對Cu擴散的影響
Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion
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摘要: 利用磁控濺射方法在表面有SiO2層的Si基片上濺射Ta薄膜,采用X射線光電子能譜研究了SiO2/Ta界面以及Ta5Si3標準樣品,并進行計算機譜圖擬合分析.實驗結果表明在制備態下在SiO2/Ta界面處有更穩定的化合物新相Ta5Si3和Ta2O5生成.在采用Ta作阻擋層的ULSI銅互連結構中這些反應產物可能有利于對Cu擴散的阻擋.Abstract: Ta films were deposited on Si substrates precoated with SiO2 by magnetron sputtering. The SiO2/Ta interface and the Ta5Si3 standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO2/Ta interface. The more stable products Ta5Si3 and Ta2O5 may be beneficial to stop the diffusion of Cu into SiO2.
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