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  • TiCl4-NH3-H2體系低溫化學氣相沉積TiN的機理和條件

    Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System

    • 摘要: 在TiCl4-NH3-H2體系中,TiN的沉積溫度通常在650-950℃,本研究采用TiCl4+H2與NH3+H2兩種混和氣體,可使TiN的沉積溫度降低到500℃。所得TiN的硬度HV0.1=17.67kN·m m-2a=0.4234nm,550℃時硬度HV0.1=18.91kN·mm-2,580℃ HV0.1=20.36kN·mm-2,而其顏色則依次由紫黃變為黃色。350℃部生成TiNCl。TiNCl在402℃開始分解,到800℃分解完畢,其分解反應的表觀活化能為131kJ/mol。TiN生成反應表現活比能為67.3kJ/mol。

       

      Abstract: This papar presented a study of low temperature chemical vapour deposition of TiN in TiCl4-NH3-H2 system. TiN was obtained at the temperature of 500℃. Its hardness HV0.1 = 17.67kN/mm2, and lattice constant a=0.4234nm.The Surface reaction activation energy of TiN was 67.3kJ /mol. Decomposition of TiNCl, from which TiN was produced, was also studied. The activation energy of this reaction was 131kJ/mol.

       

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