單晶硅氧化動力學及氧化膜結構分析

Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Fil

摘要: 用氣固相反應原理分析了單晶硅熱氧化機理。在氧化中期,考慮到熱應力對擴散系數的影響,從而得出了硅氧化的一個新模型,即化學反應控速——四次方混合控速——擴散控速模型。用該模型處理了文獻4中的數據與本實驗結果均得到滿意的相關系數。另外,用掃描電鏡和透射電鏡對氧化膜進行了觀察,分析了單晶硅的氧化膜生長機理。

Abstract: Oxidation kinetics of siliconmonocrystal have been studied. The three steps rule of gas-solid reaction have been raised. The reaction rate of oxidation is divided into three stages:in the initial period the reaction rate is controlled by interface chemical reaction; in the second stage by both interface chemical reaction and slow diffusion due to stress; in the third stage by diffusion.And the microstructure of oxide film have been observed by SEM and TEM.